chx2089 - 99f ref. : dschx20896354 - 20 dec 06 1 / 6 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 9 - 18ghz frequency multiplier gaas monolithic microwave ic description the chx2089 - 99f is a cascadable times 2 frequency multiplier monolithic circuit. it is designed for a wide range of applications, from ism to commercial communication systems. the backside of the chip is both rf and dc grounds. this helps simplify the assembly process. the circuit is manufactured with a phemt process, 0.25m gate leng th, via holes through the substrate, air bridges and electron beam gate lithography. main features main electrical characteristics tamb. = + 25c symbol parameter min typ max unit fin input frequency range 8 9 11.5 ghz fout output frequency range 16 18 23 ghz pin input power 12 15 dbm pout output power for +12dbm input power 11 15 dbm -20 -16 -12 -8 -4 0 4 8 12 16 20 8 9 10 11 12 13 input freq ( ghz ) output power ( dbm ) p_out_h1 p_out_h2
chx2089 - 99f 9 - 18ghz frequency multiplier ref. : dschx20896354 - 20 dec 06 2 / 6 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 electrical characteristics tamb = +25c, vd = 3.5v, vg1 = - 0.9v, vg2 adjusted for id=50 ma , no rf (vg2 typ.= - 0.3v). symbol parameter min typ max unit fin input frequency range 8 9 11.5 ghz fout output frequency range 16 18 23 ghz pin input power 12 15 dbm pout output power for +12dbm input power 11 15 dbm is/fo fin rejection at the output 15 20 dbc vswrin input vswr 2.0:1 vswrout output vswr 2.5:1 id bias current without rf 5 0 70 ma id _rf bias current with rf (pin=12 dbm) 60 85 ma these values are representative of on - wafer measurements that are made without bonding wires at the rf ports. absolute maximum ratings (1) tamb.= + 25c symbol parameter values unit vd drain bias voltage 4 v id drain bias current 90 ma vg gate bias voltage - 2 to +0.4 v pin input power 20 dbm ta operating temperature range - 40 to +85 c tstg storage temperature range - 55 to +155 c tstg storage temperature range - 55 to +150 c (1) operation of this device above anyone of these parameters may cause permanent damage. typical bias conditions tamb.= + 25c symbol pad n o parameter values unit vd d positive drain voltage 3.5 v vg1 g1 negative multiplier stage gate voltage - 0.9 v v g 2 g 2 negative buffer stage gate voltage ( - 0.3 ) v vg2 should be adjusted to achieve id = 50ma while no rf applied at the input.
9 - 18ghz frequency multiplier chx2089 - 99f ref. : dschx20896354 - 20 dec 06 3 / 6 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on wafer measurements tamb.= +25c, vd = 3.5v, vg1 = - 0.9v, vg2 = - 0.3v. pout = f(fin) for pin=12 dbm pout = f(pin) for fin = 9 ghz -30 -26 -22 -18 -14 -10 -6 -2 2 6 10 14 18 22 5 7 9 11 13 15 input power ( dbm ) outpout power ( dbm ) pout(fin) pout(2xfin) -20 -16 -12 -8 -4 0 4 8 12 16 20 8 9 10 11 12 13 input freq ( ghz ) output power ( dbm ) pout(2xfin) pout(fin)
chx2089 - 99f 9 - 18ghz frequency multiplier ref. : dschx20896354 - 20 dec 06 4 / 6 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 mechanical data chip thickness: 100m. chip size : 890x1620 35m all dimensions are in micrometers
9 - 18ghz frequency multiplier chx2089 - 99f ref. : dschx20896354 - 20 dec 06 5 / 6 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended assembly plan note: supply feed should be bypassed. 25m diameter gold wire is to be preferred. recommended circuit bonding table label type decoupling comment d vd 100pf drain supply g1 vg1 100pf multiplier gate supply g2 vg 2 100pf buffer amplifier gate supply m gnd nc no connection required
chx2089 - 99f 9 - 18ghz frequency multiplier ref. : dschx20896354 - 20 dec 06 6 / 6 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums products. recommended environmental management ums products are compliant with the regulation in particular with the directives rohs n2011/65 and reach n1907/2006. more environmental data are available in the application note an0019 also available at http://www.u ms - gaas.com . ordering information chip form : chx2089 - 99f /00 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semicondu ctors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.
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